View IRFL4315PBF_4111800.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 95258
SMPS MOSFET
Applications l High frequency DC-DC converters l Lead-Free
IRFL4315PBF
HEXFET(R) Power MOSFET RDS(on) max
185mW@VGS = 10V
VDSS
150V
ID
2.6A
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
2.6 2.1 21 2.8 0.02 30 6.3 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Thermal Resistance
Symbol
RJA
Parameter
Junction-to-Ambient (PCB Mount, steady state)
Typ.
---
Max.
45
Units
C/W
Notes through are on page 8
www.irf.com
1
05/24/04
IRFL4315PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 --- --- 3.0 --- --- --- --- Typ. --- 0.19 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 185 m VGS = 10V, ID = 1.6A 5.0 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 3.5 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 12 2.1 6.8 8.4 21 20 19 420 100 25 720 48 98 Max. Units Conditions --- S VDS = 50V, ID = 1.6A 19 ID = 1.6A 3.1 nC VDS = 120V 10 VGS = 10V --- VDD = 75V --- ID = 1.6A ns --- RG = 15 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 120V, = 1.0MHz --- VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
38 3.1
Units
mJ A
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 61 160 2.6 A 21 1.5 91 240 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.1A, VGS = 0V TJ = 25C, IF = 1.6A di/dt = 100A/s
D
S
2
www.irf.com
IRFL4315PBF
100
VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP
1
5.5V
5.5V
1
0.1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100
0.1 0.1 1
20s PULSE WIDTH Tj = 150C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
2.5
I D = 2.6A
ID, Drain-to-Source Current ()
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.5
10.00
T J = 150C
1.0
T J = 25C VDS = 50V 20s PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0
0.5
1.00
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ, Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRFL4315PBF
10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C SHORTED gs ds Crss = C gd Coss = Cds + Cgd
12
VGS, Gate-to-Source Voltage (V)
ID= 1.6A VDS= 120V VDS= 75V VDS= 30V
10 8 6 4 2
C, Capacitance(pF)
1000
Ciss
100
Coss
Crss
10 1 10 100 1000
FOR TEST CIRCUIT SEE FIGURE 13
0 0 2 4 6 8 10 12 14
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100 OPERATION IN THIS AREA LIMITED BY R DS(on)
TJ = 150 C
ID, Drain-to-Source Current (A)
I SD , Reverse Drain Current (A)
10
10
100sec 1 1msec Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 10msec
T J= 25 C
1
V GS = 0 V
0.1 0.0 0.5 1.0 1.5 2.0 2.5
1000
V SD ,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRFL4315PBF
3.0
VDS
2.5
RD
VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
2.0
ID , Drain Current (A)
-V DD
1.5
1.0
Fig 10a. Switching Time Test Circuit
0.5
VDS 90%
0.0 25 50 75 100 125 150
TT , Case Temperature ( C) , Ambient Temperature
A
(C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Fig 10b. Switching Time Waveforms
100
(Z thJA )
D = 0.50
10
0.20 0.10
Thermal Response
0.05 P DM 1 0.02 t1 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = 2. Peak T 0.0001 0.001 0.01 0.1 t1 / t 2 +TA 10 100
J = P DM x Z thJA
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFL4315PBF
RDS (on) , Drain-to-Source On Resistance (m)
240 220 200 180 160 140 120 100 0 5 10 15 20 25 ID , Drain Current (A) VGS = 10V
RDS(on) , Drain-to -Source On Resistance (m)
4000 3500 3000 2500 2000 1500 1000
ID = 2.6A
500 0 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
VG
100
Charge
VGS
3mA
TOP
80
ID 1.4A 2.5A 3.1A
IG
ID
Current Sampling Resistors
BOTTOM
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
EAS , Single Pulse Avalanche Energy (mJ)
60
40
15V
V(BR)DSS tp
VDS L
DRIVER
20
RG
20V
D.U.T
IAS
+ V - DD
A
0 25 50 75 100 125 150
I AS
tp
0.01
Starting Tj, Junction Temperature
( C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
www.irf.com
IRFL4315PBF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
T HIS IS AN IRFL014
PART NUMBER INT ERNAT IONAL RECTIFIER LOGO
LOT CODE AXXXX
FL014 314P
A = ASS EMBLY S IT E DAT E CODE CODE (YYWW) YY = YEAR WW = WEEK P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL)
T OP
BOT T OM
www.irf.com
7
IRFL4315PBF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
2.05 (.080) 1.95 (.077) 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010) TR
7.55 (.297) 7.45 (.294)
7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272)
16.30 (.641) 15.70 (.619)
2.30 (.090) 2.10 (.083)
NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4
330.00 (13.000) MAX.
50.00 (1.969) MIN.
NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
18.40 (.724) MAX. 14.40 (.566) 12.40 (.488)
4
3
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Starting TJ = 25C, L = 7.8mH
RG = 25, IAS = 3.1A.
Pulse width 400s; duty cycle 2%.
ISD 1.6A, di/dt 230A/s, VDD V(BR)DSS,
TJ 150C.
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/04
8
www.irf.com

▲Up To Search▲

Price & Availability of IRFL4315PBF

	To Download IRFL4315PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .